Semiconductor materials research station opens in Hohhot

A semiconductor materials research station was established in Hohhot, capital of Inner Mongolia autonomous region, on June 28.

Hu Wenrui, an academician of the Chinese Academy of Sciences and Huang Yali, director of the Hohhot Organization Department unveiled a plaque for the new facility.

Hu is the founder of the National Microgravity Laboratory. His silicon carbide (SiC) research team is the first one to conduct research on semiconductor materials in China. The team has made breakthroughs on the SiC technology of single crystal growth and wafer processing.

In cooperation with Hu's team, the research station will promote the application of SiC technology and help form semiconductor materials industrial clusters in Hohhot.

In the future, the station will focus on the research and development of SiC and Ⅲ-Ⅴcompound semiconductor materials, as well as providing professional suggestions to local firms. It will further push the development of industrial technology in Inner Mongolia autonomous region.