Tangjiawan firm uplifts China's semiconductor industry

A significant breakthrough in the manufacture of wafers with low warp and dislocation density along with little defection or electric leakage has been made by Innoscience (Zhuhai) Technology Co Ltd.

The semiconductor company's 8-inch GaN-on-Si (gallium nitride-on-silicone) production line began operating on Nov 9. It took two years to establish the first complete and mass production line of the epitaxy and chips in the country.

In addition to breaking a technical bottleneck in the domestic semiconductor industry, the technology will boost development of upstream and downstream industries. It also will contribute to the rise of the country's semiconductor and advanced manufacturing sectors, the company says.

Innoscience (Zhuhai) Technology was created by Innoscience Group Inc and Zhuhai Hi-tech Capital in the Zhuhai National Hi-Tech Industrial Development Zone headquartered in Tangjiawan.

Costing 1.09 billion yuan ($164 million), the first phase was launched in December 2015. Given its technical strength, it is expected to become a world-leading wide-band gap semiconductor enterprise integrating research, development, epitaxial growth, chip manufacture, and testing.

Its 100V-650V GaN-on-Si power devices, the design and performance of which are among the most advanced in the world, will be widely used in the power electronics, new-energy, electric vehicle, information and communication, and intelligent industries. 

Innoscience will give full play to its technical advantages and bolster itself as a world-class semiconductor enterprise fueling China's innovation and development, said chairman Luo Weiwei.

Luo's remarks were supported by Eicke R Weber, academician of the German Academy of Engineering and Innoscience founder.

Eicke Weber delivers a keynote speech [Photo by Kang Zhenhua / Zhuhai Daily]

Also at the inauguration ceremony were Xu Xiaotian, executive vice president cum secretary-general of the China Semiconductor Industry Association; Rudi Cartuyvels, vice president of the Interuniversity Microelectronics Centre; and Dr Felix J Grawert, president of Aixtron. These frontrunners in the industry spoke highly of the breakthrough made by the enterprise.